제조사부품번호

onsemi FCH Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 178-4239
제조사 부품 번호:: FCH125N65S3R0-F155
제조업체:: onsemi

onsemi FCH Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩163,729.20

일시적 품절

2026년 5월 04일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩5,457.64	₩163,729.20
60 - 90	₩5,339.20	₩160,176.00
120 +	₩5,220.76	₩156,605.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4239
제조사 부품 번호:: FCH125N65S3R0-F155
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Series	FCH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	181W
	Maximum Operating Temperature	150°C
	Width	4.82 mm
	Standards/Approvals	No
	Length	15.87mm
	Height	20.82mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Series FCH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 181W
	Maximum Operating Temperature 150°C
	Width 4.82 mm
	Standards/Approvals No
	Length 15.87mm
	Height 20.82mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ TJ = 150 oC

Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)

Ultra Low Gate Charge (Typ. Qg = 46 nC)

Optimized Capacitance

Typ. RDS(on) = 105 mΩ

Internal Gate Resistance: 0.5 Ω

Benefits:

Higher system reliability at low temperature operation

Low switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Consumer

Industrial

End Products:

Notebook / Desktop computer / Game console

Telecom / Server

UPS / Solar

LED Lighting / Ballast

onsemi FCH Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-247

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