IXYS Single HiperFET, Q3-Class 1 N-Channel MOSFET, 38 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN44N100Q3

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RS 제품 번호:
168-4755
제조사 부품 번호:
IXFN44N100Q3
제조업체:
IXYS
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브랜드

IXYS

Transistor Configuration

Single

Series

HiperFET, Q3-Class

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

38 A

Maximum Drain Source Voltage (Vds)

1 kV

Channel Mode

Enhancement

Pin Count

4

Package Type

SOT-227

Height

9.6 mm

Length

38.23 mm

Maximum Drain Source Resistance (Rds)

220 mΩ

Maximum Gate Source Voltage (Vgs)

30 V, -30 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

960 W

Minimum Operating Temperature

-55 °C

Mount Type

Screw

Width

25.07 mm

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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