IXYS Type N-Channel MOSFET, 28 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN32N100Q3

대량 구매 할인 기용 가능

Subtotal (1 tube of 10 units)*

₩775,481.20

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  • 2026년 10월 09일 부터 배송
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한팩당
Per Tube*
10 - 10₩77,548.12₩775,481.20
20 - 90₩75,220.68₩752,206.80
100 +₩73,716.68₩737,166.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
168-4754
제조사 부품 번호:
IXFN32N100Q3
제조업체:
IXYS
제품 정보를 선택해 유사 제품을 찾기
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브랜드

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

320mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

195nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

780W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

9.6mm

Standards/Approvals

No

Width

25.07 mm

Length

38.23mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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