제조사부품번호

IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227 IXFN80N50Q3

RS 제품 번호:: 146-1760
제조사 부품 번호:: IXFN80N50Q3
제조업체:: IXYS

IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227 IXFN80N50Q3

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대량 구매 할인 기용 가능

Subtotal (1 tube of 10 units)*

₩682,985.20

일시적 품절

2026년 9월 11일 부터 배송

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수량	한팩당	Per Tube*
10 - 10	₩68,298.52	₩682,979.56
20 - 30	₩66,249.32	₩662,491.32
40 +	₩64,262.16	₩642,619.72

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 146-1760
제조사 부품 번호:: IXFN80N50Q3
제조업체:: IXYS

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	500V
	Package Type	SOT-227
	Mount Type	Panel
	Pin Count	4
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	780W
	Typical Gate Charge Qg @ Vgs	200nC
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.4V
	Maximum Operating Temperature	150°C
	Width	25.07 mm
	Standards/Approvals	No
	Height	9.6mm
	Length	38.23mm
	Automotive Standard	No

	모두 선택
	브랜드 IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 500V
	Package Type SOT-227
	Mount Type Panel
	Pin Count 4
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 780W
	Typical Gate Charge Qg @ Vgs 200nC
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.4V
	Maximum Operating Temperature 150°C
	Width 25.07 mm
	Standards/Approvals No
	Height 9.6mm
	Length 38.23mm
	Automotive Standard No

COO (Country of Origin):: US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227 IXFN80N50Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

MOSFET Transistors, IXYS

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