IXYS Type N-Channel MOSFET, 82 A, 500 V Enhancement, 4-Pin SOT-227 IXFN100N50Q3

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Subtotal (1 tube of 10 units)*

₩656,345.60

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  • 2026년 9월 11일 부터 배송
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Per Tube*
10 - 10₩65,634.56₩656,345.60
20 - 30₩63,666.20₩636,662.00
40 +₩61,756.12₩617,561.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
168-4752
제조사 부품 번호:
IXFN100N50Q3
제조업체:
IXYS
제품 정보를 선택해 유사 제품을 찾기
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브랜드

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

49mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

960W

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

255nC

Maximum Operating Temperature

150°C

Length

38.23mm

Standards/Approvals

No

Width

25.07 mm

Height

9.6mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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