Infineon IRF3710ZS Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-263

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RS 제품 번호:
162-3273
제조사 부품 번호:
IRF3710ZSTRLPBF
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

IRF3710ZS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

82nC

Maximum Power Dissipation Pd

160W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Automotive Standard

AEC-Q101

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

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