Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263 IRF3710STRLPBF
- RS 제품 번호:
- 218-3096
- Distrelec 제품 번호:
- 304-39-414
- 제조사 부품 번호:
- IRF3710STRLPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩22,447.20
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 190 | ₩2,244.72 | ₩22,447.20 |
| 200 - 990 | ₩2,190.20 | ₩21,902.00 |
| 1000 + | ₩1,801.04 | ₩18,010.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-3096
- Distrelec 제품 번호:
- 304-39-414
- 제조사 부품 번호:
- IRF3710STRLPBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86.7nC | |
| Maximum Power Dissipation Pd | 3.8W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | EIA 418 | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86.7nC | ||
Maximum Power Dissipation Pd 3.8W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals EIA 418 | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free
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