제조사부품번호

Wolfspeed Type N-Channel MOSFET, 5.3 A, 1700 V Enhancement, 7-Pin TO-263 C2M1000170J

RS 제품 번호:: 915-8833
제조사 부품 번호:: C2M1000170J
제조업체:: Wolfspeed

Wolfspeed Type N-Channel MOSFET, 5.3 A, 1700 V Enhancement, 7-Pin TO-263 C2M1000170J

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩29,440.80

마지막 RS 재고

258 개 단위 배송 준비 완료
2026년 1월 05일 부터 최종 22 개 단위 배송

수량	한팩당	한팩당*
2 - 12	₩14,720.40	₩29,440.80
14 - 24	₩14,344.40	₩28,688.80
26 +	₩14,128.20	₩28,256.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 915-8833
제조사 부품 번호:: C2M1000170J
제조업체:: Wolfspeed

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.3A
	Maximum Drain Source Voltage Vds	1700V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Power Dissipation Pd	78W
	Maximum Gate Source Voltage Vgs	25 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	3.8V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	4.57mm
	Length	10.23mm
	Width	10.99 mm
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.3A
	Maximum Drain Source Voltage Vds 1700V
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Power Dissipation Pd 78W
	Maximum Gate Source Voltage Vgs 25 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 3.8V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 4.57mm
	Length 10.23mm
	Width 10.99 mm
	Automotive Standard No

COO (Country of Origin):: CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

Wolfspeed Type N-Channel MOSFET, 5.3 A, 1700 V Enhancement, 7-Pin TO-263 C2M1000170J

Wolfspeed Silicon Carbide Power MOSFETs

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