Wolfspeed C3M N-Channel MOSFET, 22 A, 1 kV Enhancement, 8-Pin TO-263 C3M0120100J
- RS 제품 번호:
- 150-3947
- 제조사 부품 번호:
- C3M0120100J
- 제조업체:
- Wolfspeed
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
₩924,800.00
단종되는 중
- 최종적인 650 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩18,496.00 | ₩924,840.00 |
| 100 - 150 | ₩17,942.00 | ₩897,080.00 |
| 200 + | ₩17,404.00 | ₩870,200.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 150-3947
- 제조사 부품 번호:
- C3M0120100J
- 제조업체:
- Wolfspeed
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | C3M | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21.5nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 4.8V | |
| Maximum Gate Source Voltage Vgs | +15V, +9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.32mm | |
| Length | 10.23mm | |
| Width | 9.12mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Wolfspeed | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series C3M | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21.5nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 4.8V | ||
Maximum Gate Source Voltage Vgs +15V, +9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.32mm | ||
Length 10.23mm | ||
Width 9.12mm | ||
Automotive Standard No | ||
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses.
Minimum of 1kV Vbr across entire operating temperature range
low source inductance package with separate driver source pin
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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