제조사부품번호

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

RS 제품 번호:: 144-2255
제조사 부품 번호:: BSM300D12P2E001
제조업체:: ROHM

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

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대량 구매 할인 기용 가능

Subtotal (1 tray of 4 units)*

₩8,074,163.84

현재 액세스할 수 없는 재고 정보

수량	한팩당	Per Tray*
4 - 16	₩2,018,540.96	₩8,074,167.60
20 +	₩1,978,169.84	₩7,912,675.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 144-2255
제조사 부품 번호:: BSM300D12P2E001
제조업체:: ROHM

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	ROHM
	Product Type	SiC Power Module
	Channel Type	Type N
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	1200V
	Series	BSM
	Mount Type	Surface Mount
	Pin Count	4
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	1875W
	Maximum Operating Temperature	150°C
	Height	17mm
	Length	152mm
	Width	57.95 mm
	Number of Elements per Chip	2

	모두 선택
	브랜드 ROHM
	Product Type SiC Power Module
	Channel Type Type N
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 1200V
	Series BSM
	Mount Type Surface Mount
	Pin Count 4
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 1875W
	Maximum Operating Temperature 150°C
	Height 17mm
	Length 152mm
	Width 57.95 mm
	Number of Elements per Chip 2

COO (Country of Origin):: JP

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

SiC Power Modules, ROHM

MOSFET Transistors, ROHM Semiconductor

Note

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