ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

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RS 제품 번호:
144-2255
제조사 부품 번호:
BSM300D12P2E001
제조업체:
ROHM
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브랜드

ROHM

Channel Type

Type N

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

1200V

Series

BSM

Mount Type

Surface

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1875W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

152mm

Width

57.95mm

Height

17mm

Number of Elements per Chip

2

COO (Country of Origin):
JP

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor


Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

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