ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
- RS 제품 번호:
- 144-2254
- 제조사 부품 번호:
- BSM180D12P3C007
- 제조업체:
- ROHM
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- RS 제품 번호:
- 144-2254
- 제조사 부품 번호:
- BSM180D12P3C007
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Series | BSM | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 17mm | |
| Length | 122mm | |
| Width | 45.6mm | |
| Number of Elements per Chip | 2 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Series BSM | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 17mm | ||
Length 122mm | ||
Width 45.6mm | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
관련된 링크들
- ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
- ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001
- ROHM Type N-Channel SiC Power Module, 204 A, 1200 V BSM180D12P2C101
- ROHM Half Bridge BSM Type N-Channel SiC Power Module, 240 A, 1200 V Enhancement, 4-Pin BSM120D12P2C005
- ROHM Type N-Channel MOSFET, 204 A, 1200 V N Module BSM180D12P2E002
- ROHM Type N-Channel MOSFET, 180 A, 1200 V N Tray BSM180C12P3C202
- ROHM Type N-Channel MOSFET, 204 A, 1200 V N Tray BSM180C12P2E202
- ROHM Type N-Channel MOSFET, 204 A, 1200 V N Module