Infineon HEXFET Type N-Channel MOSFET, 83 A, 150 V Enhancement, 3-Pin TO-220 IRFB4228PBF

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Subtotal (1 tube of 50 units)*

₩211,406.00

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한팩당
Per Tube*
50 - 50₩4,228.12₩211,368.40
100 - 150₩4,136.00₩206,781.20
200 +₩4,043.88₩202,175.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
124-9007
제조사 부품 번호:
IRFB4228PBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

83A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

330W

Typical Gate Charge Qg @ Vgs

72nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Length

1.3mm

Standards/Approvals

No

Height

8.77mm

Width

4.82 mm

Automotive Standard

No

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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