Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

₩2,218,400.00

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1000 - 1000₩2,218.40₩2,218,400.00
2000 - 3000₩2,173.28₩2,174,032.00
4000 +₩2,130.04₩2,130,604.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
124-8751
제조사 부품 번호:
IPB120P04P4L03ATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type P

Product Type

Power Transistor

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

OptiMOS P

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

180nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.25 mm

Length

10mm

Standards/Approvals

RoHS

Height

4.4mm

Automotive Standard

AEC-Q

해당 안됨

COO (Country of Origin):
CN

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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