Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

₩2,158,240.00

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  • 2026년 3월 30일 부터 배송
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1000 - 1000₩2,158.24₩2,157,676.00
2000 - 2000₩2,115.00₩2,114,436.00
3000 +₩2,071.76₩2,072,136.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
229-1818
제조사 부품 번호:
IPB120P04P4L03ATMA2
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

IPB120P04P4L-03, -40V, P-Ch, 3.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2


The Infineon p channel logic level MOSFET has highest current capability and 100 percent avalanche tested. It has lowest switching and conduction power losses for highest thermal efficiency.

Summary of Features


•P-channel - Logic Level - Enhancement mode

•AEC qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package (RoHS compliant)

•100% Avalanche tested

Benefits


•No charge pump required for high side drive.

•Simple interface drive circuit

•World's lowest RDSon at 40V

•Highest current capability

•Lowest switching and conduction power losses for highest thermal efficiency

•Robust packages with superior quality and reliability

•Standard packages TO-252, TO-263, TO-220, TO-262

Potential Applications


•High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)

•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump

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