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Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263

RS 제품 번호:: 214-4365
제조사 부품 번호:: IPB120N08S403ATMA1
제조업체:: Infineon

Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263

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RS 제품 번호:: 214-4365
제조사 부품 번호:: IPB120N08S403ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS -T2
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	128nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	278W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	4.5mm
	Length	10.02mm
	Width	9.27 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS -T2
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 128nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 278W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 4.5mm
	Length 10.02mm
	Width 9.27 mm
	Automotive Standard AEC-Q101

Datasheet - IPB120N08S403ATMA1

This Infineon OptiMOS T2 MOSFET is 100% Avalanche tested and is RoHS compliant.

It is AEC Q101 qualified

Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263

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