Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1
- RS 제품 번호:
- 826-9092
- 제조사 부품 번호:
- IPB120P04P4L03ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩28,162.40
마지막 RS 재고
- 최종적인 3,790 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 240 | ₩2,816.24 | ₩28,162.40 |
| 250 - 490 | ₩2,746.68 | ₩27,466.80 |
| 500 + | ₩2,705.32 | ₩27,053.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 826-9092
- 제조사 부품 번호:
- IPB120P04P4L03ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type P | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.25 mm | |
| Length | 10mm | |
| Height | 4.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type P | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Operating Temperature 175°C | ||
Width 9.25 mm | ||
Length 10mm | ||
Height 4.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q | ||
해당 안됨
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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