제조사부품번호

Infineon OptiMOS 5 Type N-Channel Power Transistor, 120 A, 100 V Enhancement, 3-Pin TO-220 IPP023N10N5AKSA1

RS 제품 번호:: 110-7116
제조사 부품 번호:: IPP023N10N5AKSA1
제조업체:: Infineon

Infineon OptiMOS 5 Type N-Channel Power Transistor, 120 A, 100 V Enhancement, 3-Pin TO-220 IPP023N10N5AKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 4 units)*

₩22,048.64

현재 액세스할 수 없는 재고 정보

수량	한팩당	한팩당*
4 - 8	₩5,512.16	₩22,052.40
12 - 20	₩5,376.80	₩21,507.20
24 +	₩5,292.20	₩21,168.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 110-7116
제조사 부품 번호:: IPP023N10N5AKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS 5
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	168nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, Pb-Free, JEDEC (J-STD20 and JESD22)
	Width	4.57 mm
	Height	15.95mm
	Length	10.36mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS 5
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 168nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, Pb-Free, JEDEC (J-STD20 and JESD22)
	Width 4.57 mm
	Height 15.95mm
	Length 10.36mm
	Automotive Standard No

해당 안됨

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Infineon OptiMOS 5 Type N-Channel Power Transistor, 120 A, 100 V Enhancement, 3-Pin TO-220 IPP023N10N5AKSA1

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