Infineon IPP Type N-Channel Power Transistor, 136 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1

RS 제품 번호:: 349-410
제조사 부품 번호:: IPP069N20NM6AKSA1
제조업체:: Infineon

Infineon IPP Type N-Channel Power Transistor, 136 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1

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Subtotal (1 unit)*

₩15,380.00

498 개 단위 배송 준비 완료
추가로 2027년 2월 18일 부터 500 개 단위 배송

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RS 제품 번호:: 349-410
제조사 부품 번호:: IPP069N20NM6AKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	136A
	Maximum Drain Source Voltage Vds	200V
	Package Type	PG-TO220-3
	Series	IPP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	300W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	73nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, RoHS, J-STD-020
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 136A
	Maximum Drain Source Voltage Vds 200V
	Package Type PG-TO220-3
	Series IPP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 300W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 73nC
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, RoHS, J-STD-020
	Automotive Standard No

Datasheet - IPP069N20NM6AKSA1

COO (Country of Origin):: MY

Infineon IPP Series Power Transistor, 200V Maximum Drain Source Voltage, 136A Maximum Continuous Drain Current - IPP069N20NM6AKSA1

This power transistor is a high-current N-channel enhancement MOSFET designed for power switching and conversion duties in through-hole assemblies. It operates over a wide temperature span and is intended for applications requiring substantial continuous drain current and elevated voltage handling, housed in a PG-TO220-3 package for straightforward mounting.

Features and Benefits:

• 200V drain voltage enables high-voltage switching tasks
• 136A continuous drain current supports heavy load operation
• 6.9mΩ Rds(on) minimises conduction losses under load
• 300W power dissipation allows sustained high-power use
• 73nC typical gate charge reduces switching transition energy
• 1V forward voltage lowers diode conduction drop

Applications

• Suitable for high-power motor drive stages
• Ideal for industrial power supplies and inverters
• Used with battery management systems for high-current paths
• Can be used for server and telecoms power regulation
• Suitable for audio amplifier output stages requiring high current

What gate drive considerations are necessary for fast switching?

The gate can tolerate up to 20V

design the driver to supply sufficient peak current to charge the 73nC gate quickly while observing the maximum Vgs limit.

How does temperature range affect placement on a heatsink?

With an operating range from -55°C to 175°C, thermal interface selection and heatsink sizing must account for the 300W dissipation and intended ambient conditions.

What mounting method is required for PCB assembly?

The component is configured for through-hole mounting in a PG-TO220-3 package, enabling secure mechanical attachment and effective thermal coupling to external sinks.

Are there limitations on reverse conduction behaviour?

The device exhibits a forward diode characteristic with approximately 1V drop

circuit design should account for this during synchronous or body-diode conduction events.