Infineon IPP Type N-Channel Power Transistor, 39 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1

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Subtotal (1 pack of 5 units)*

₩22,964.20

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한팩당*
5 - 45₩4,592.84₩22,960.44
50 - 95₩4,363.48₩21,815.52
100 +₩4,042.00₩20,211.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-118
제조사 부품 번호:
IPP339N20NM6AKSA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

39A

Maximum Drain Source Voltage Vds

200V

Series

IPP

Package Type

PG-TO220-3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

33.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC for Industrial Applications

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring reduced conduction losses. The MOSFET also boasts an excellent gate charge x RDS(on) product (FOM) for superior switching performance and very low reverse recovery charge (Qrr) for efficient operation. It is 100% avalanche tested, ensuring robustness, and can operate at a high temperature of 175°C, making it reliable even in demanding environments.

Optimized for motor drives and battery powered applications

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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