Vishay TrenchFET N channel-Channel MOSFET, 330 A, 60 V Enhancement, 8-Pin PowerPAK SIRS4614EPW-T1-RE3

N
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₩5,784.00

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  • 2027년 1월 28일 부터 배송
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Tape(s)
Per Tape
1 - 9₩5,784.00
10 - 24₩3,752.00
25 - 99₩2,234.00
100 - 499₩2,166.00
500 +₩2,122.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
904-978
제조사 부품 번호:
SIRS4614EPW-T1-RE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

330A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

PowerPAK

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.000995Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

98nC

Maximum Power Dissipation Pd

205W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6mm

Standards/Approvals

ROHS

Width

5mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay power MOSFET designed for high-efficiency operations, specifically tackling power losses associated with conduction in electronic applications. This component is characterised by its robust construction and durability under varying conditions.

TrenchFET Gen IV technology ensures excellent performance with minimal power loss

Rated for a drain-source voltage of 60 V, providing stability in high-voltage environments

Low on-state resistance maximises efficiency in power management applications

Designed with enhanced power dissipation capabilities for reduced thermal issues

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