Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK SIRS4300DP-T1-RE3
- RS 제품 번호:
- 653-095
- 제조사 부품 번호:
- SIRS4300DP-T1-RE3
- 제조업체:
- Vishay
N
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Subtotal (1 reel of 3000 units)*
₩10,242,240.00
재고있음
- 추가로 2025년 12월 29일 부터 3,000 개 단위 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩3,414.08 | ₩10,240,548.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 653-095
- 제조사 부품 번호:
- SIRS4300DP-T1-RE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 680A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK | |
| Series | SIRS4300DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00040Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Length | 6.10mm | |
| Width | 5.10 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 680A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK | ||
Series SIRS4300DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00040Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Length 6.10mm | ||
Width 5.10 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
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