Vishay SIR N-Channel Single MOSFETs, 203 A, 100 V Enhancement Mode, 8-Pin P SIRS5100EPW-T1-RE3

N
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₩5,182.00

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  • 2027년 11월 02일 부터 배송
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
829-344
제조사 부품 번호:
SIRS5100EPW-T1-RE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Channel Type

N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

203A

Maximum Drain Source Voltage Vds

100V

Package Type

P

Series

SIR

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0027Ω

Channel Mode

Enhancement Mode

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

205W

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Height

1.04mm

Width

5.15mm

Length

6.15mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay power MOSFET delivers high performance for applications demanding efficient switching. With its Advanced design, it enables significant reductions in power loss and enhanced overall thermal management.

Provides a drain-source voltage rating of 100 V, ensuring reliable operation

Achieves a low on-state resistance, which minimises power loss during conduction

Offers a continuous drain current of up to 203 A, suitable for high-power demands

Features a Pb-free and halogen-free construction for compliance with environmental regulations

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