Vishay TrenchFET N-Channel Power MOSFET, 100 A, 60 V N, 8-Pin PowerPAK SIR692DP-T1-UE3

N
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₩3,796.00

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  • 2027년 10월 12일 부터 배송
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Tape(s)
Per Tape
1 - 9₩3,796.00
10 - 24₩2,480.00
25 - 99₩1,474.00
100 - 499₩1,430.00
500 +₩1,408.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
851-506
제조사 부품 번호:
SIR692DP-T1-UE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0048Ω

Channel Mode

N

Typical Gate Charge Qg @ Vgs

63.5nC

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Height

1.04mm

Length

6.05mm

Standards/Approvals

AEC-Q101 Qualified

Automotive Standard

AEC-Q101

COO (Country of Origin):
DE
The Vishay high-performance MOSFET designed for efficient switching capabilities in power management applications. Its robust construction ensures reliability and optimal functionality in various demanding environments.

N-Channel configuration providing superior operational efficiency

ThunderFET technology enhances performance by optimising the balance of on-resistance and switching characteristics

Offers a maximum drain-source voltage of 250 V, ensuring suitability for high-voltage applications

Designed with a maximum continuous drain current of 24.2 A, accommodating extensive load conditions

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