Vishay TrenchFET N-Channel Power MOSFET, 40 A, 80 V N, 8-Pin PowerPAK SIR178DP-T1-UE3
- RS 제품 번호:
- 851-503
- 제조사 부품 번호:
- SIR178DP-T1-UE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit, on tapes of 1)*
₩3,662.00
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- 2027년 3월 09일 부터 배송
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩3,662.00 |
| 10 - 24 | ₩2,390.00 |
| 25 - 99 | ₩1,408.00 |
| 100 - 499 | ₩1,384.00 |
| 500 + | ₩1,340.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 851-503
- 제조사 부품 번호:
- SIR178DP-T1-UE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 69.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.05mm | |
| Height | 1.04mm | |
| Width | 5.25mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 69.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 6.05mm | ||
Height 1.04mm | ||
Width 5.25mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
The Vishay N-Channel MOSFET designed to provide efficient power management in various applications. Its Compact PowerPAK SO-8 packaging ensures reliability and performance, making it a versatile choice for modern electronics.
Features TrenchFET Gen IV technology for enhanced efficiency
Offers very low on-resistance to reduce power loss
Designed for operation with low voltage gate drive at 2.5 V
100% tested for R and UIS to ensure quality and reliability
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