Vishay TrenchFET N-Channel Power MOSFET, 63 A, 650 V, 8-Pin PowerPAK SIHK031N60AE-T1GE3
- RS 제품 번호:
- 851-497
- 제조사 부품 번호:
- SIHK031N60AE-T1GE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
₩15,834.00
일시적 품절
- 2027년 4월 05일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩15,834.00 |
| 10 - 49 | ₩9,826.00 |
| 50 - 99 | ₩5,964.00 |
| 100 + | ₩5,806.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 851-497
- 제조사 부품 번호:
- SIHK031N60AE-T1GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.25mm | |
| Length | 6.05mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1.04mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.25mm | ||
Length 6.05mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1.04mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- KR
The Vishay power MOSFET designed for high-performance switching applications, offering effective management of electrical loads with superior efficiency and low energy losses.
Utilises fourth generation E series technology for enhanced performance
Offers low on-state resistance, reducing energy dissipation
Capable of handling high effective capacitance for reliable operation
Provides significant reduction in both switching and conduction losses
관련된 링크들
- Vishay SIHK Type N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
- Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3
- Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3
- Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3
- Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3
- Vishay S N channel-Channel MOSFET, 28 A, 650 V N, 8-Pin PowerPAK 10 x 12 SIHK135N65S-T1-GE3
- Vishay SiH N channel-Channel MOSFET, 48 A, 650 V Enhancement, 4-Pin PowerPAK SO-8 SIHK045N60E-T1GE3
