STMicroelectronics STB Series N-Channel MOSFET, 56 A, 250 V Enhancement Mode, 3-Pin TO-263 STB25N018M9
- RS 제품 번호:
- 830-840
- 제조사 부품 번호:
- STB25N018M9
- 제조업체:
- STMicroelectronics
N
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 830-840
- 제조사 부품 번호:
- STB25N018M9
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | STB Series | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Power Dissipation Pd | 320W | |
| Maximum Operating Temperature | 150°C | |
| Width | 10mm | |
| Standards/Approvals | ROHS | |
| Length | 10.3mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series STB Series | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Power Dissipation Pd 320W | ||
Maximum Operating Temperature 150°C | ||
Width 10mm | ||
Standards/Approvals ROHS | ||
Length 10.3mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is an N-channel super-junction component built on Advanced MDmesh M9 technology. It enables smaller more Compact layouts without compromising thermal capacity.
D2PAK surface-mount assembly package style
Silicon-based multi-drain manufacturing process
Low gate charge with outstanding efficiency
Enhanced dv/dt capability and avalanche tested
관련된 링크들
- STMicroelectronics STB Series N channel-Channel MOSFET, 56 A, 250 V Enhancement Mode, 3-Pin TO-263 STB25N018M9
- STMicroelectronics STB Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263 STB18N60M6
- STMicroelectronics STB Type N-Channel MOSFET, 30 A, 600 V Enhancement, 2-Pin TO-263 STB45N60DM6
- STMicroelectronics STB Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 STB37N60DM2AG
- STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-263 STB43N65M5
- STMicroelectronics MDmesh Type N-Channel MOSFET, 17 A, 650 V Enhancement, 3-Pin TO-263 STB24NM60N
