Vishay SISS N-Channel Single MOSFETs, 52 A, 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS862ADN-T1-UE3
- RS 제품 번호:
- 829-348
- 제조사 부품 번호:
- SISS862ADN-T1-UE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩1,988.00
일시적 품절
- 2027년 11월 01일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 24 | ₩1,988.00 |
| 25 - 99 | ₩1,318.00 |
| 100 - 499 | ₩760.00 |
| 500 + | ₩738.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 829-348
- 제조사 부품 번호:
- SISS862ADN-T1-UE3
- 제조업체:
- Vishay
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SISS | |
| Package Type | PowerPAK 1212-8SLW | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0072Ω | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 19.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Height | 1.07mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SISS | ||
Package Type PowerPAK 1212-8SLW | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0072Ω | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 19.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Height 1.07mm | ||
Standards/Approvals RoHS Compliant | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Advanced N-Channel MOSFET designed primarily for high-efficiency switching applications. It delivers robust performance with low on-resistance characteristics.
Operating voltage up to 60V ensures versatility across applications
Very low on-state resistance optimises power efficiency
Guaranteed safe operating area enhances reliability during high-demand conditions
Thoroughly tested for R and UIS for assured performance
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