Infineon OptiMOS N-Channel Power MOSFET, 510 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH61N06NM5ATMA1

모든 MOSFETs 열람하기
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
RS 제품 번호:
762-983
제조사 부품 번호:
IQFH61N06NM5ATMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

510A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TSON-12

Series

OptiMOS

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.61mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

190nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

8mm

Height

1.1mm

Width

6mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 5Power-Transistor,60V optimized for low voltage drives, battery powered and synchronous rectification application. Fully qualified according to JEDEC for industrial applications.

100% avalanche tested

Superior thermal resistance

N-channel

Pb-free lead plating, RoHS compliant

관련된 링크들