Vishay SiK N-Channel MOSFET, 795 A, 40 V Enhancement, 8-Pin PowerPAK 10 x 12 SIJK140E-T1-GE3
- RS 제품 번호:
- 735-142
- 제조사 부품 번호:
- SIJK140E-T1-GE3
- 제조업체:
- Vishay
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩20,400.00
일시적 품절
- 2027년 11월 17일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩20,400.00 |
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| 50 - 99 | ₩9,780.00 |
| 100 + | ₩9,480.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-142
- 제조사 부품 번호:
- SIJK140E-T1-GE3
- 제조업체:
- Vishay
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 795A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SiK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00047Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 312nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 536W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 40V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4mm | |
| Width | 10mm | |
| Length | 12mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 795A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 10 x 12 | ||
Series SiK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00047Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 312nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 536W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 40V | ||
Maximum Operating Temperature 175°C | ||
Height 4mm | ||
Width 10mm | ||
Length 12mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
0.21°C/W low RthJC for optimal thermal performance
312nC typical total gate charge
Standard level FET with 2.4V minimum VGS
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