Vishay SQJQ140ER Type N-Channel Single MOSFETs, 413 A, 40 V Enhancement, 4-Pin PowerPAK SQJQ140ER-T1_GE3
- RS 제품 번호:
- 653-124
- 제조사 부품 번호:
- SQJQ140ER-T1_GE3
- 제조업체:
- Vishay
N
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Subtotal (1 reel of 2000 units)*
₩8,708,160.00
재고있음
- 2,000 개 단위 배송 준비 완료
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 + | ₩4,354.08 | ₩8,708,912.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 653-124
- 제조사 부품 번호:
- SQJQ140ER-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 413A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJQ140ER | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00065Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 288nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.6mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 10.42mm | |
| Width | 8 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 413A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJQ140ER | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00065Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 288nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.6mm | ||
Standards/Approvals AEC-Q101 | ||
Length 10.42mm | ||
Width 8 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive-grade N-channel MOSFET engineered for high-efficiency switching in compact, power-dense systems. It supports up to 40 V drain-source voltage and delivers exceptional current handling with up to 413 A at 175 °C. Housed in a thin PowerPAK 8x8LR package, it leverages TrenchFET Gen IV technology for ultra-low RDS(on) and superior thermal performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
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