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STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7

RS 제품 번호:: 215-232
제조사 부품 번호:: SCT040H120G3AG
제조업체:: STMicroelectronics

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7

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Subtotal (1 unit)*

₩25,737.20

일시적 품절

975 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩25,737.20
10 - 99	₩24,966.40
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-232
제조사 부품 번호:: SCT040H120G3AG
제조업체:: STMicroelectronics

참조 문서

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	H2PAK-7
	Series	SCT
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	300W
	Maximum Gate Source Voltage Vgs	22 V
	Typical Gate Charge Qg @ Vgs	54nC
	Forward Voltage Vf	2.6V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	10.4 mm
	Standards/Approvals	AEC-Q101, RoHS
	Height	4.8mm
	Length	15.25mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 1200V
	Package Type H2PAK-7
	Series SCT
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 300W
	Maximum Gate Source Voltage Vgs 22 V
	Typical Gate Charge Qg @ Vgs 54nC
	Forward Voltage Vf 2.6V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 10.4 mm
	Standards/Approvals AEC-Q101, RoHS
	Height 4.8mm
	Length 15.25mm
	Automotive Standard AEC-Q101

Datasheet - SCT040H120G3AG

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7

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