ROHM HT8MC5 Type P, Type N-Channel Single MOSFETs, 60 V Enhancement, 8-Pin HSMT-8 HT8MC5TB1
- RS 제품 번호:
- 687-389
- 제조사 부품 번호:
- HT8MC5TB1
- 제조업체:
- ROHM
N
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대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩2,083.04
재고있음
- 추가로 2025년 12월 29일 부터 100 개 단위 배송
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 48 | ₩1,041.52 | ₩2,081.16 |
| 50 - 198 | ₩924.96 | ₩1,849.92 |
| 200 - 998 | ₩830.96 | ₩1,660.04 |
| 1000 - 1998 | ₩661.76 | ₩1,323.52 |
| 2000 + | ₩650.48 | ₩1,302.84 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-389
- 제조사 부품 번호:
- HT8MC5TB1
- 제조업체:
- ROHM
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P, Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSMT-8 | |
| Series | HT8MC5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 97mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13W | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.8mm | |
| Length | 3.45mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P, Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSMT-8 | ||
Series HT8MC5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 97mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13W | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.8mm | ||
Length 3.45mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
The ROHM N channel and P channel power MOSFET designed for efficient motor drive applications. Built within an advanced HSMT8 package, this device boasts low on-state resistance, enabling enhanced power management while minimising heat generation. Its robust capabilities make it suitable for various applications demanding reliability and efficiency, particularly in environments where space is at a premium. With a Pb-free and RoHS-compliant design, it aligns with modern standards for environmental safety while delivering impressive specifications, ensuring versatile deployment across numerous electronic sectors.
Low on resistance enhances power efficiency and reduces energy loss
High Power small mold package (HSMT8) is ideal for space-constrained applications
Pb free plating and RoHS compliance ensure environmental friendliness
Halogen-free construction provides additional safety and compliance
Fully Rg and UIS tested for improved reliability under dynamic conditions
Embossed packaging optimises handling and insertion during manufacturing
Maximum junction temperature of 150°C allows reliable performance in high-heat environments.
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