ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1
- RS 제품 번호:
- 687-385
- 제조사 부품 번호:
- HT8MD5HTB1
- 제조업체:
- ROHM
N
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩2,165.76
재고있음
- 200 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩1,082.88 | ₩2,165.76 |
| 20 - 48 | ₩956.92 | ₩1,913.84 |
| 50 - 198 | ₩861.04 | ₩1,723.96 |
| 200 - 998 | ₩693.72 | ₩1,387.44 |
| 1000 + | ₩673.04 | ₩1,346.08 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-385
- 제조사 부품 번호:
- HT8MD5HTB1
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Dual N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HT8MD5HT | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 13.0W | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.8mm | |
| Length | 3.45mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Dual N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HT8MD5HT | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 13.0W | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.8mm | ||
Length 3.45mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed for versatile electronic applications. With its dual N channel and P channel configuration, this component delivers exceptional performance, allowing for effective power management in motor drives and other demanding circuits. Features such as low on-resistance ensure minimal power loss during operation, while the HSMT8 packaging allows for a compact footprint without compromising performance. HT8MD5H supports a wide voltage range and is compliant with RoHS and halogen-free standards, making it an ideal choice for environmentally-conscious designs. Built with reliability in mind, this MOSFET is suitable for various applications requiring robust performance under varying conditions.
Low on resistance designs enhance efficiency in power applications
High power capabilities in a compact HSMT8 package streamline integration
RoHS compliant and halogen-free construction supports eco-friendly designs
100% Rg and UIS tested for reliability under demanding operational conditions
Optimised for motor drive applications, ensuring effective power control
Wide voltage range ensures versatility in various electronic environments
Designed to withstand maximum junction temperatures of up to 150°C
관련된 링크들
- ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1
- ROHM SH8MD5HT Type P, Type N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin SOP-8 SH8MD5HTB1
- ROHM HT8KE6 2 Type N-Channel MOSFET Arrays, 12.5 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE6HTB1
- ROHM HT8MC5 Type P, Type N-Channel Single MOSFETs, 60 V Enhancement, 8-Pin HSMT-8 HT8MC5TB1
- ROHM HT8MB5 Type N, Type P-Channel Single MOSFETs, 40 V Enhancement, 8-Pin HSMT-8 HT8MB5TB1
- ROHM HT8KE5H Dual N-Channel MOSFET, 6.5 A, 100 V Enhancement, 8-Pin HSOP-8 HT8KE5HTB1
- ROHM HT8 2 Type N-Channel MOSFET, 15 A, 60 V Enhancement, 8-Pin HSMT-8 HT8KC6TB1
- ROHM HP8KF7H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSOP-8 HP8KF7HTB1