제조사부품번호

ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1

RS 제품 번호:: 687-371
제조사 부품 번호:: HT8KF6HTB1
제조업체:: ROHM

ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1

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대량 구매 할인 기용 가능

Subtotal (1 tape of 2 units)*

₩2,669.60

일시적 품절

2026년 1월 19일 부터 배송

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수량	한팩당	Per Tape*
2 - 18	₩1,334.80	₩2,669.60
20 - 48	₩1,176.88	₩2,353.76
50 - 198	₩1,060.32	₩2,122.52
200 - 998	₩851.64	₩1,703.28
1000 +	₩830.96	₩1,660.04

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 687-371
제조사 부품 번호:: HT8KF6HTB1
제조업체:: ROHM

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모두 선택	제품 정보	값
	브랜드	ROHM
	Product Type	Single MOSFETs
	Channel Type	Dual N
	Maximum Drain Source Voltage Vds	150V
	Series	HT8KF6H
	Package Type	HSMT-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	214mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	14W
	Typical Gate Charge Qg @ Vgs	6.4nC
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.4 mm
	Standards/Approvals	RoHS
	Length	3.45mm
	Height	0.8mm
	Automotive Standard	No

	모두 선택
	브랜드 ROHM
	Product Type Single MOSFETs
	Channel Type Dual N
	Maximum Drain Source Voltage Vds 150V
	Series HT8KF6H
	Package Type HSMT-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 214mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 14W
	Typical Gate Charge Qg @ Vgs 6.4nC
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.4 mm
	Standards/Approvals RoHS
	Length 3.45mm
	Height 0.8mm
	Automotive Standard No

Datasheet - HT8KF6HTB1

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed for efficient power management in various applications. This component provides robust electrical characteristics, including a maximum continuous drain current of ±7.0A, ensuring reliable operation under high loads. Its Pb-free and halogen-free materials meet RoHS standards, contributing to environmentally friendly designs. This MOSFET's thermal resistance is optimised, allowing for effective heat dissipation, thus improving device longevity and performance in various electronic applications.

Low on resistance for improved efficiency

High power capacity in a compact HSMT8 mould package

Complies with RoHS regulations with Pb free plating

Halogen-free design to support eco-friendly initiatives

Versatile application in motor drives and power management systems

High maximum junction temperature rating of 150°C

Impressive maximum power dissipation of 14W

Reliable avalanche characteristics with a maximum energy of 0.24mJ

ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1

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