ROHM HT8MB5 Type N, Type P-Channel Single MOSFETs, 40 V Enhancement, 8-Pin HSMT-8 HT8MB5TB1
- RS 제품 번호:
- 687-388
- 제조사 부품 번호:
- HT8MB5TB1
- 제조업체:
- ROHM
N
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩2,083.04
재고있음
- 100 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 48 | ₩1,041.52 | ₩2,081.16 |
| 50 - 198 | ₩924.96 | ₩1,849.92 |
| 200 - 998 | ₩830.96 | ₩1,660.04 |
| 1000 - 1998 | ₩661.76 | ₩1,323.52 |
| 2000 + | ₩650.48 | ₩1,302.84 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-388
- 제조사 부품 번호:
- HT8MB5TB1
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type N, Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSMT-8 | |
| Series | HT8MB5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 13W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | RoHS | |
| Width | 3.4 mm | |
| Length | 3.45mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type N, Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSMT-8 | ||
Series HT8MB5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 13W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals RoHS | ||
Width 3.4 mm | ||
Length 3.45mm | ||
Automotive Standard No | ||
The ROHM P channel power MOSFET designed for demanding applications such as motor drives and switching power supplies. This component features exceptionally low on-resistance, making it ideal for power management solutions where efficiency is paramount. The HT8MB5 is housed in a compact HSMT8 package, facilitating space-saving designs while maintaining high performance. With impressive maximum ratings and a robust design, this MOSFET provides reliable operation in varying environmental conditions, ensuring stability and longevity in its operations.
Low on resistance enhances efficiency and thermal management
Compact HSMT8 package allows for reduced footprint in designs
Rated for a drain-source voltage of 40V ensures versatility in applications
Power dissipation capability of 13W supports high-power applications
Pb free plating along with RoHS compliance demonstrates eco-friendliness
Halogen-free materials promote safety in electronic applications
100% tested for Rg and UIS, guaranteeing reliability and performance
Suitable for both switching and motor drive applications, increasing usability
관련된 링크들
- ROHM HT8MC5 Type P, Type N-Channel Single MOSFETs, 60 V Enhancement, 8-Pin HSMT-8 HT8MC5TB1
- ROHM HT8 2 Type N-Channel MOSFET, 15 A, 60 V Enhancement, 8-Pin HSMT-8 HT8KC6TB1
- ROHM HT8K 2 Type N-Channel MOSFET, 7 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE5TB1
- ROHM HT8K 2 Type N-Channel MOSFET, 13 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE6TB1
- ROHM HT8KB6 1 Type P-Channel MOSFET, 15 A, 40 V Depletion, 8-Pin HSMT-8 HT8KB6TB1
- ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1
- ROHM HP8 2 Type N-Channel MOSFET, 10 A, 60 V Enhancement, 8-Pin HSMT-8 HT8KC5TB1
- ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1