Vishay SIHM080N60E Type N-Channel Single MOSFETs, 51 A, 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 reel of 3000 units)*

₩26,643,360.00

Add to Basket
수량 선택 또는 입력
현재 액세스할 수 없는 재고 정보
수량
한팩당
릴당*
3000 +₩8,881.12₩26,642,232.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
653-177
제조사 부품 번호:
SIHM080N60E-T1-GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

SIHM080N60E

Mount Type

PCB

Pin Count

4

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

500W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

8mm

Width

7.9 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Power MOSFET is a 4th generation E Series MOSFET designed for high-efficiency switching in demanding applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance. Packaged in PowerPAK 8x8L, it's Ideal for server, telecom, SMPS, and power factor correction supplies.

Pb Free

Halogen free

RoHS compliant

관련된 링크들