Vishay SIHM080N60E Type N-Channel Single MOSFETs, 51 A, 600 V Enhancement, 4-Pin PowerPAK
- RS 제품 번호:
- 653-178
- 제조사 부품 번호:
- SIHM080N60E-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 1 unit)*
₩11,520.64
일시적 품절
- 2,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩11,520.64 |
| 10 - 49 | ₩11,184.12 |
| 50 - 99 | ₩10,826.92 |
| 100 + | ₩9,334.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 653-178
- 제조사 부품 번호:
- SIHM080N60E-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHM080N60E | |
| Package Type | PowerPAK | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Width | 7.9 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHM080N60E | ||
Package Type PowerPAK | ||
Mount Type PCB | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Width 7.9 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay Power MOSFET is a 4th generation E Series MOSFET designed for high-efficiency switching in demanding applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance. Packaged in PowerPAK 8x8L, it's Ideal for server, telecom, SMPS, and power factor correction supplies.
Pb Free
Halogen free
RoHS compliant
관련된 링크들
- Vishay SIHM080N60E Type N-Channel Single MOSFETs, 51 A, 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3
- Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs, 32 A, 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs, 32 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3
- Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK
- Vishay EF Type N-Channel Single MOSFETs, 31 A, 600 V Enhancement, 8-Pin PowerPAK