Vishay E Type N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

RS 제품 번호:: 228-2873
제조사 부품 번호:: SiHH080N60E-T1-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

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Subtotal (1 pack of 2 units)*

₩16,438.50

추가로 2026년 6월 29일 부터 2,594 개 단위 배송

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수량	한팩당	한팩당*
2 - 48	₩8,219.25	₩16,438.50
50 - 98	₩7,975.50	₩15,951.00
100 - 248	₩7,731.75	₩15,463.50
250 - 998	₩7,497.75	₩14,995.50
1000 +	₩7,273.50	₩14,547.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 228-2873
제조사 부품 번호:: SiHH080N60E-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	32A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK
	Series	E
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Power Dissipation Pd	184W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 32A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK
	Series E
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Power Dissipation Pd 184W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiHH080N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 32A Continuous Drain Current - SiHH080N60E-T1-GE3

This power MOSFET is a high-voltage N-channel switching device designed for demanding power conversion and control tasks. It operates across a wide temperature range and is intended for surface-mounted applications where compact, robust switching performance is required. The component delivers substantial continuous current capability while supporting high drain-to-source voltages for use in industrial and electronic power stages.

Features and Benefits:

• 650V drain-to-source rating enables high-voltage switching
• 32A continuous drain current supports sustained load handling
• 70mΩ Rds(on) reduces conduction losses during operation
• 42nC typical gate charge improves switching speed control
• 184W power dissipation allows significant thermal throughput
• 150°C maximum operating temperature tolerates elevated junctions

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front-ends
• Used for power factor correction stages in converters
• Can be used for resonant and hard-switching inverter legs
• Used with discrete transistor arrays in power management modules

What gate voltage range is safe for control circuitry?

The gate may be driven up to 30V relative to source

control logic should remain within this limit to protect the gate oxide.

How does the package affect board-level thermal design?

The PowerPAK surface-mount package with four pins requires thermal vias or heatsinking on the PCB to dissipate up to 184W under specified conditions.

What environmental extremes can the device withstand?

It is rated for continuous operation down to -55°C and up to 150°C, allowing use across wide ambient and junction temperature swings.

What type of channel conduction does the device provide?

It is an enhancement-mode N-channel device, conducting when a positive gate-to-source voltage is applied.