Vishay EF Type N-Channel Single MOSFETs, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3

N

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 reel of 3000 units)*

₩18,854,520.00

Add to Basket
수량 선택 또는 입력
현재 액세스할 수 없는 재고 정보
수량
한팩당
릴당*
3000 +₩6,284.84₩18,854,520.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
653-081
제조사 부품 번호:
SIHR120N60EF-T1GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

EF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.125Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

8 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for improved switching efficiency. It delivers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Housed in a PowerPAK 8x8LR package, it's Ideal for server, telecom, lighting, industrial, and solar power applications.

Pb Free

Halogen free

RoHS compliant

관련된 링크들