Vishay E N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

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RS 제품 번호:
228-2871
제조사 부품 번호:
SiHH080N60E-T1-GE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK

Series

E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

184W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 32A Maximum Continuous Drain Current - SiHH080N60E-T1-GE3


This power MOSFET is a high-voltage N-channel switching device designed for surface-mount power conversion and control tasks. It operates across a wide ambient range and is intended for applications requiring substantial current handling, efficient switching and compact PCB mounting. The device is manufactured to meet RoHS environmental standards and is supplied in a PowerPAK package for low-profile assembly.

Features and Benefits:


• 650V drain capability enables high-voltage applications
• 32A continuous drain current supports heavy load handling
• 70mΩ Rds(on) reduces conduction losses under load
• 42nC typical gate charge allows faster switching transitions
• 184W power dissipation manages thermal energy in operation
• Vgs limit of 30V permits standard gate‑drive voltages

Applications


• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor inverter stages
• Used with PFC circuits requiring robust switches
• Can be used for renewable‑energy inverter sections
• Suitable for compact surface‑mount power assemblies

What temperature extremes can the device tolerate in operation?


It is specified to operate from -55°C up to 150°C, accommodating harsh thermal environments and elevated junction temperatures.

How does the package assist with PCB assembly and thermal behaviour?


The PowerPAK surface‑mount package offers a low‑profile footprint for automated placement and provides a thermal path suited to copper heatsinking on the PCB.

What gate‑drive considerations are required for reliable switching?


Drive circuitry should respect the ±30V gate‑source rating and be sized to supply the typical 42nC gate charge for desired switching speed and EMI control.

Is this device appropriate for automotive systems?


It is not defined as an automotive‑standard device, so designers should verify qualification requirements before using it in certified automotive programmes.

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