Vishay SQJQ114EL Type N-Channel Single MOSFETs, 136 A, 100 V Enhancement, 4-Pin PowerPAK SQJQ114EL-T1_GE3
- RS 제품 번호:
- 653-071
- 제조사 부품 번호:
- SQJQ114EL-T1_GE3
- 제조업체:
- Vishay
N
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 3000 units)*
₩7,574,520.00
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩2,524.84 | ₩7,572,828.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 653-071
- 제조사 부품 번호:
- SQJQ114EL-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 136A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SQJQ114EL | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0055Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 277W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Height | 1.9mm | |
| Length | 8mm | |
| Width | 8 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 136A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SQJQ114EL | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0055Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 277W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Height 1.9mm | ||
Length 8mm | ||
Width 8 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay Automotive-grade N-channel MOSFET optimized for high-efficiency power switching in harsh environments. It supports up to 100 V drain-source voltage and operates reliably at junction temperatures up to 175 °C. Housed in a PowerPAK 8x8L package, it leverages TrenchFET Gen IV technology for superior thermal and electrical performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
관련된 링크들
- Vishay SQJQ114EL Type N-Channel Single MOSFETs, 136 A, 100 V Enhancement, 4-Pin PowerPAK
- Vishay SQJQ14 Type N-Channel Single MOSFETs, 345 A, 40 V Enhancement, 3-Pin PowerPAK SQJQ142ER-T1_GE3
- Vishay SQJQ140ER Type N-Channel Single MOSFETs, 413 A, 40 V Enhancement, 4-Pin PowerPAK SQJQ140ER-T1_GE3
- Vishay SQJQ14 Type N-Channel Single MOSFETs, 345 A, 40 V Enhancement, 3-Pin PowerPAK
- Vishay SQJQ140ER Type N-Channel Single MOSFETs, 413 A, 40 V Enhancement, 4-Pin PowerPAK
- Vishay SUM50010EL Type N-Channel Single MOSFETs, 150 A, 60 V Enhancement, 3-Pin PowerPAK SUM50010EL-GE3
- Vishay SUM50010EL Type N-Channel Single MOSFETs, 150 A, 60 V Enhancement, 3-Pin PowerPAK
- Vishay SQJQ936EL 2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin 8x8L SQJQ936EL-T1_GE3