Vishay SQJQ186ER Type N-Channel MOSFET, 329 A, 30 V Enhancement, 8-Pin PowerPAK (8x8LR)
- RS 제품 번호:
- 252-0313
- 제조사 부품 번호:
- SQJQ186ER-T1_GE3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 252-0313
- 제조사 부품 번호:
- SQJQ186ER-T1_GE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 329A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SQJQ186ER | |
| Package Type | PowerPAK (8x8LR) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0014mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Height | 1.6mm | |
| Length | 6.15mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 329A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SQJQ186ER | ||
Package Type PowerPAK (8x8LR) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0014mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Height 1.6mm | ||
Length 6.15mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.9 mm height
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