Vishay TrenchFET N-Channel Single MOSFETs, 352 A, 80 V Enhancement Mode, 8-Pin PowerPAK (8x8LR) SQJQ580ER-T1_GE3
- RS 제품 번호:
- 847-933
- 제조사 부품 번호:
- SQJQ580ER-T1_GE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
₩8,376.00
일시적 품절
- 2027년 5월 17일 부터 배송
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩8,376.00 |
| 10 - 49 | ₩5,204.00 |
| 50 - 99 | ₩3,150.00 |
| 100 + | ₩3,082.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 847-933
- 제조사 부품 번호:
- SQJQ580ER-T1_GE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 352A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK (8x8LR) | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00144Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS3 Compliant | |
| Width | 8mm | |
| Height | 1.6mm | |
| Length | 8mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 352A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK (8x8LR) | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00144Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS3 Compliant | ||
Width 8mm | ||
Height 1.6mm | ||
Length 8mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N-Channel power MOSFET delivers efficient high-performance switching for a variety of demanding applications, ensuring reliability under extreme conditions.
TrenchFET Gen V technology ensures enhanced efficiency and performance
AEC-Q101 qualified for automotive applications, assuring compliance with industry standards
Continuous drain current rated at 352 A under standard conditions
Thin profile of 1.9 mm maximises space efficiency in designs
100% tested for R and UIS, ensuring reliable operation
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