Infineon IPQ Type N-Channel MOSFET, 30 A, 60 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T017S7AXTMA1
- RS 제품 번호:
- 349-200
- 제조사 부품 번호:
- IPQC60T017S7AXTMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩32,035.20
일시적 품절
- 2026년 5월 04일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩32,035.20 |
| 10 - 99 | ₩28,829.80 |
| 100 + | ₩26,581.32 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-200
- 제조사 부품 번호:
- IPQC60T017S7AXTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPQ | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 196nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC, AEC Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPQ | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 196nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC, AEC Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7TA enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7TA is optimized for static switching and high current applications. The new temperature sensor enhances S7A features, allowing the best possible utilization of the power transistor.
Optimized price performance in low frequency switching applications
High pulse current capability
Seamless diagnostics at lowest system cost
Increased system performance
Minimized conduction losses
More reliability and longer system lifetime
Shock and vibration resistance
No contact arcing or bouncing
관련된 링크들
- Infineon IPQ Type N-Channel MOSFET, 54 A, 60 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T040S7AXTMA1
- Infineon IPQ Type N-Channel Power Device, 90 A, 60 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T022S7AXTMA1
- Infineon IPQ Type N-Channel MOSFET, 30 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T017S7XTMA1
- Infineon IPQC60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T010S7AXTMA1
- Infineon IPQ Type N-Channel Power Device, 90 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T022S7XTMA1
- Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1
- Infineon 600V CoolMOS SiC N-Channel MOSFET, 30 A, 600 V, 22-Pin PG-HDSOP-22 IPQC60R017S7XTMA1
- Infineon IPQC60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T010S7XTMA1
