제조사부품번호

Infineon IPW Type N-Channel MOSFET, 64 A, 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1

RS 제품 번호:: 349-266
제조사 부품 번호:: IPW60R037CM8XKSA1
제조업체:: Infineon

Infineon IPW Type N-Channel MOSFET, 64 A, 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1

대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩15,487.44

재고있음

240 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩15,487.44
10 - 99	₩13,947.72
100 - 499	₩12,864.84
500 - 999	₩11,926.72
1000 +	₩10,678.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-266
제조사 부품 번호:: IPW60R037CM8XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	600V
	Series	IPW
	Package Type	PG-TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	37mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	79nC
	Maximum Power Dissipation Pd	329W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 600V
	Series IPW
	Package Type PG-TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 37mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 79nC
	Maximum Power Dissipation Pd 329W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications, RoHS
	Automotive Standard No

Datasheet - IPW60R037CM8XKSA1

COO (Country of Origin):: CN

The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.

Suitable for hard and soft switching topologies

Ease of use and fast design in through low ringing tendency

Simplified thermal management thanks to our advanced die attach technique

Suitable for a wide variety of applications and power ranges

Increased power density solutions enabled by using products with smaller footprint

Infineon IPW Type N-Channel MOSFET, 64 A, 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1

관련된 링크들