Infineon CoolMOS Type N-Channel MOSFET, 36.5 A, 950 V Enhancement, 3-Pin PG-TO-247 IPW95R130PFD7XKSA1
- RS 제품 번호:
- 284-922
- 제조사 부품 번호:
- IPW95R130PFD7XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 30 units)*
₩219,082.50
일시적 품절
- 2026년 9월 03일 부터 배송
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수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 90 | ₩7,302.75 | ₩219,064.95 |
| 120 + | ₩6,938.10 | ₩208,125.45 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-922
- 제조사 부품 번호:
- IPW95R130PFD7XKSA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36.5A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | CoolMOS | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36.5A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series CoolMOS | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an Advanced power device represents the latest innovation in super junction technology, specifically designed for demanding applications such as lighting and industrial power supplies. The integration of ultra fast body diodes enhances responsiveness, making it Ideal for resonant topologies. With robust performance and superior reliability, this device stands at the forefront of efficiency in power management. Special attention has been given to reducing reverse recovery charge, enabling higher switching frequencies and increased power density in designs.
Integrated fast body diode ensures reliability
Best in class thermal performance for efficient heat dissipation
Durable construction promotes long term stability
Seamless integration into existing circuits
Optimal for high voltage applications with enhanced safety
Compact package reduces PCB footprint and increases flexibility
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