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Infineon IPZ Type N-Channel MOSFET, 64 A, 600 V Enhancement, 4-Pin PG-TO247-4 IPZA60R037CM8XKSA1

RS 제품 번호:: 349-269
제조사 부품 번호:: IPZA60R037CM8XKSA1
제조업체:: Infineon

Infineon IPZ Type N-Channel MOSFET, 64 A, 600 V Enhancement, 4-Pin PG-TO247-4 IPZA60R037CM8XKSA1

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Subtotal (1 unit)*

₩17,047.84

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추가로 2025년 12월 29일 부터 240 개 단위 배송

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수량	한팩당
1 - 9	₩17,047.84
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1000 +	₩11,761.28

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-269
제조사 부품 번호:: IPZA60R037CM8XKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	600V
	Series	IPZ
	Package Type	PG-TO247-4
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	37mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	329W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	79nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, JEDEC for Industrial Applications
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 600V
	Series IPZ
	Package Type PG-TO247-4
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 37mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 329W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 79nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IPZA60R037CM8XKSA1

COO (Country of Origin):: CN

The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.

Suitable for hard and soft switching topologies

Ease of use and fast design in through low ringing tendency

Simplified thermal management thanks to our advanced die attach technique

Suitable for a wide variety of applications and power ranges

Increased power density solutions enabled by using products with smaller footprint

Infineon IPZ Type N-Channel MOSFET, 64 A, 600 V Enhancement, 4-Pin PG-TO247-4 IPZA60R037CM8XKSA1

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