Infineon F4-11MR12W2M1H_B70 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK F411MR12W2M1HB70BPSA1
- RS 제품 번호:
- 349-249
- 제조사 부품 번호:
- F411MR12W2M1HB70BPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩604,062.80
재고있음
- 15 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 + | ₩604,062.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-249
- 제조사 부품 번호:
- F411MR12W2M1HB70BPSA1
- 제조업체:
- Infineon
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | F4-11MR12W2M1H_B70 | |
| Package Type | EasyPACK | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 20.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60068, IEC 60749, IEC 60747 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series F4-11MR12W2M1H_B70 | ||
Package Type EasyPACK | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 20.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60068, IEC 60749, IEC 60747 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET fourpack module 1200 V, 11 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic. The MOSFET is designed with best in class packaging featuring a compact 12.25 mm height, optimizing space while maintaining exceptional performance. It incorporates leading edge Wide Bandgap materials, offering superior efficiency and reliability in demanding applications. The module is engineered with very low stray inductance, minimizing power losses and improving overall switching performance.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Better thermal conductivity of DCB material
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