Infineon F4-17MR12W1M1HP_B76 Type N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HPB76BPSA1

Subtotal (1 unit)*

₩369,859.92

Add to Basket
수량 선택 또는 입력
재고있음
  • 30 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 +₩369,859.92

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
348-966
제조사 부품 번호:
F417MR12W1M1HPB76BPSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

EasyPACK

Series

F4-17MR12W1M1HP_B76

Mount Type

Screw

Maximum Drain Source Resistance Rds

34.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

23 V

Maximum Power Dissipation Pd

20mW

Forward Voltage Vf

5.35V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60749, IEC 60068, IEC 60747

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC, pre-applied thermal interface material and PressFIT contact technology. This MOSFET is built with best-in-class packaging, featuring a compact 12 mm height for efficient integration. It utilizes leading edge Wide Bandgap materials, which enhance performance and energy efficiency. The design offers very low module stray inductance, reducing power losses and improving switching characteristics. Powered by the Enhanced CoolSiC MOSFET Gen 1, it provides superior thermal performance and reliability.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

관련된 링크들