Infineon F4-17MR12W1M1H_B76 Type N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HB76BPSA1
- RS 제품 번호:
- 349-252
- 제조사 부품 번호:
- F417MR12W1M1HB76BPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩346,692.68
재고있음
- 24 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 + | ₩346,692.68 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-252
- 제조사 부품 번호:
- F417MR12W1M1HB76BPSA1
- 제조업체:
- Infineon
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | F4-17MR12W1M1H_B76 | |
| Package Type | EasyPACK | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 61140, IEC 60749 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series F4-17MR12W1M1H_B76 | ||
Package Type EasyPACK | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 61140, IEC 60749 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC and PressFIT contact technology. This MOSFET is designed with best in class packaging, offering a compact 12 mm height for efficient space utilization. It leverages leading edge Wide Bandgap materials, providing enhanced power efficiency and performance. With very low module stray inductance, it minimizes power loss and improves switching dynamics.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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